SCS210AMC Diode Silicon Carbide Schottky 650V 10A Through Hole TO-220FM Power Supply Unit replacement Chip
Upgrade Your Power System with the SCS210AM/C Schottky Diode
Experience Superior Performance and Efficiency in Power Conversion
Introducing the SCS210AM/C - the high-performing SiC Schottky diode engineered with Silicon Carbide technology that guarantees optimal efficiency and performance for your power system. With a maximum DC reverse voltage of 650V, and an average rectified current of 10A, this diode is your best choice for a wide range of applications, including PFC boost topology, secondary side rectification, data centers, and PV power conditioners.
One of the standout features of the SCS210AM/C is its 0ns reverse recovery time, making it responsive to your power needs. It also has no recovery time above 500mA, ensuring that it's capable of handling even high-frequency loads with ease, thanks to its capacitive rating of 365pF at 1V 1MHz. It's also incredibly easy to install, thanks to its through-hole mounting system and TO-220FM package/case. If you're looking for a reliable and high-performing diode for your power system, the SCS210AM/C is an excellent choice. Don't miss out on experiencing superior performance and efficiency in power conversion - upgrade your system with the SCS210AM/C today.
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Category |
Discrete Semiconductor Products |
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Diodes - Rectifiers - Single |
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Package |
Tube |
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Part Status |
Not For New Designs |
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Diode Type |
Silicon Carbide Schottky |
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Voltage - DC Reverse (Vr) (Max) |
650 V |
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Current - Average Rectified (Io) |
10A (DC) |
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Voltage - Forward (Vf) (Max) @ If |
1.55 V @ 10 A |
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Speed |
No Recovery Time > 500mA (Io) |
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Reverse Recovery Time (trr) |
0 ns |
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Current - Reverse Leakage @ Vr |
200 µA @ 600 V |
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Capacitance @ Vr, F |
365pF @ 1V, 1MHz |
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Mounting Type |
Through Hole |
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Package / Case |
TO-220-2 |
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Supplier Device Package |
TO-220FM |
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Operating Temperature - Junction |
175°C (Max) |
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Base Product Number |
SCS210 |