IRF1407 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power Supply Unit replacement chip
Category:
Electronic IC Chip
In-stock:
In Stock
Price:
Negotiable
Specifications
Type:
MOSFET
Package Type:
Throught Hole
Application:
Power Supply
Operating Temperature:
-45 To +125
Package / Case:
TO-220AB
FET Type:
N Channel
Drain To Source Voltage (Vdss):
75V
Current - Continuous Drain (Id) @ 25°C:
130.0 A
Rds On (Max) @ Id, Vgs:
7.8 MOhms
Vgs(th) (Max) @ Id:
3.0 V 2.0 V 4.0 V
Gate Charge (Qg) (Max) @ Vgs:
160.0 NC
Introduction
IRF1407 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Features:
- Planar cell structure for wide SOA
- Optimized for broadest availability from distribution partners
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100kHz
- Industry standard through-hole power package
- High-current carrying capability package (up to 195 A, die-size dependent)
- Capable of being wave-soldered
|
Parametrics |
IRF1407 |
|
ID (@25°C) max |
130.0 A |
|
Mounting |
THT |
|
Ptot max |
330.0 W |
|
Package |
TO-220 |
|
Polarity |
N |
|
QG (typ @10V) |
160.0 nC |
|
Qgd |
54.0 nC |
|
RDS (on) (@10V) max |
7.8 mOhms |
|
RthJC max |
0.45 K/W |
|
Tj max |
175.0 °C |
|
VDS max |
75.0 V |
|
VGS(th) min max |
3.0 V 2.0 V 4.0 V |
|
VGS max |
20.0 V |
Send RFQ
Stock:
In Stock
MOQ:
1