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Home > products > Electronic IC Chip > TK62N60W K62N60W N-Channel MOSFET 600V 61.8A 400W Through Hole TO-247 Power Supply Unit replacement IC

TK62N60W K62N60W N-Channel MOSFET 600V 61.8A 400W Through Hole TO-247 Power Supply Unit replacement IC

Category:
Electronic IC Chip
In-stock:
In Stock
Price:
Negotiable
Specifications
Type:
MOSFET
Operating Temperature:
-45 To +140
Mounting Type:
Through Hole
Package / Case:
TO-247
FET Type:
N-Channel
FET Feature:
Super Junction
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
61.8A (Ta)
Rds On (Max) @ Id, Vgs:
40mOhm @ 30.9A 10V
Vgs(th) (Max) @ Id:
3.7V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs:
180 NC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds:
6500 PF @ 300 V
Introduction

Upgrade Your ASIC Miner with an Original Toshiba K62N60W FET

The High-Voltage, High-Amperage Solution for Your Miner Control Board

 

Looking to fix your ASIC miner control board? The Bitmain PSU K62N60W replacement MOSFET from Original Toshiba is the perfect solution. With its high-voltage and high-amperage capabilities, this FET can comfortably handle currents of up to 600V and 62A, making it a reliable and safe option for your repairs. This transistor is RoHS compliant, making it a sustainable solution for all your repair needs.

 

Its versatility is unmatched, as it is commonly used in communication equipment, wired networks, EPOS, personal computers, and laptop computers. With a broad temperature range of -40°C to 105°C, the transistor is built to last, making it a reliable and cost-effective solution. And thanks to its TO-247 package, it is compact and easy to handle. Upgrade your ASIC miner today with an Original Toshiba K62N60W FET, and enjoy unparalleled performance and reliability.

 

 

Category

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single

Package

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

61.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

40mOhm @ 30.9A, 10V

Vgs(th) (Max) @ Id

3.7V @ 3.1mA

Gate Charge (Qg) (Max) @ Vgs

180 nC @ 10 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6500 pF @ 300 V

FET Feature

Super Junction

Power Dissipation (Max)

400W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

Base Product Number

TK62N60

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Stock:
In Stock
MOQ:
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