N-CH BSC0901NSATMA1 MOSFET IC Chip , 30V 28A 100A TDSON BSC0901NS
N-CH MOSFET IC Chip
,BSC0901NSATMA1 MOSFET IC Chip
,BSC0901NS
Optimize Your Power Management with Antminer S9 BSC0901NS OptiMOS
The Ultra Low Gate, Low Resistance MOSFET for Effective Performance
Upgrade your power management game with Antminer S9 BSC0901NS OptiMOS - the ultra-low gate and output charge, low on-state resistance, and special EMI behavior MOSFET that ensures effective power management. Whether you're looking to optimize your Antminer hash boards, onboard chargers, computer mainboards, DC-DC conversion, VRD/VRM, motor control, or LED, OptiMOS power adapters with half-bridge configuration (power stage 5x6) has got you covered.
Plus, these MOSFETs is available in small packages, making it perfect for any application that requires space optimization. Get the most effective performance for your power management needs and experience longer battery life with Antminer S9 BSC0901NS OptiMOS.
|
Category |
Discrete Semiconductor Products |
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Transistors - FETs, MOSFETs - Single |
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|
Package |
Tape & Reel (TR) |
|
Part Status |
Active |
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FET Type |
N-Channel |
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Technology |
MOSFET (Metal Oxide) |
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Drain to Source Voltage (Vdss) |
30 V |
|
Current - Continuous Drain (Id) @ 25°C |
28A (Ta), 100A (Tc) |
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Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
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Rds On (Max) @ Id, Vgs |
1.9mOhm @ 30A, 10V |
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Vgs(th) (Max) @ Id |
2.2V @ 250µA |
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Gate Charge (Qg) (Max) @ Vgs |
44 nC @ 10 V |
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Vgs (Max) |
±20V |
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Input Capacitance (Ciss) (Max) @ Vds |
2800 pF @ 15 V |
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FET Feature |
- |
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Power Dissipation (Max) |
2.5W (Ta), 69W (Tc) |
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Operating Temperature |
-55°C ~ 150°C (TJ) |
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Mounting Type |
Surface Mount |
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Package / Case |
8-PowerTDFN |
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Base Product Number |
BSC0901 |