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Home > products > Electronic IC Chip > STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3

STW48N60DM2 N Channel MOSFET Transistor 600V 40A 300W Through Hole TO-247-3

Category:
Electronic IC Chip
In-stock:
In Stock
Price:
Negotiable
Specifications
Type:
MOSFET
Power - Max:
300W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3
FET Type:
N-Channel
Drain To Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
40A
Rds On (Max) @ Id, Vgs:
79mOhm At 20A, 10V
Vgs(th) (Max) @ Id:
5V At 250uA
Gate Charge (Qg) (Max) @ Vgs:
70 NC At 10V
Input Capacitance (Ciss) (Max) @ Vds:
3250 PF @ 100V
Highlight:

STW48N60DM2

,

Through Hole N Channel MOSFET Transistor

,

TO-247-3 N Channel MOSFET Transistor

Introduction

STW48N60DM2 N-Channel MDmesh DM2 Power MOSFET - High-Efficiency Power Conversion Solution

Achieve Optimal Efficiency with Fast Recovery and Low On-Resistance

 

Looking for a high-performance power MOSFET that can meet the demands of the most efficient converters? The STW48N60DM2 N-Channel MOSFET is the solution you've been searching for. This powerful MOSFET is a part of the MDmesh DM2 Fast Recovery Diode family and boasts some impressive features that make it ideal for switch applications, bridge topologies, and ZVS phase-shift converters. One of the key features of the STW48N60DM2 is its fast recovery body diode.

 

This diode allows for very low recovery charge (Qrr) and time (trr) and low RDS(on). Additionally, this MOSFET has very low gate charge and input capacitance, making it the perfect choice for high-efficiency converters. It has also been 100% avalanche tested and has very high dv/dt durability, ensuring exceptional performance and longevity. For added peace of mind, the STW48N60DM2 MOSFET is equipped with zener protection, ensuring its safe and reliable operation. With its impressive features and exceptional performance, the STW48N60DM2 is the perfect choice for anyone looking to achieve optimal efficiency in their power conversion applications.

 

 

Category

Discrete Semiconductor Products

Transistors - FETs, MOSFETs - Single

Package

Tube

Product Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

79mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70 nC @ 10 V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

3250 pF @ 100 V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Base Product Number

STW48

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