FP150R07N3E4_B11 IGBT Transistor Module High Power Practical
FP150R07N3E4_B11 IGBT Transistor Module
,High Power IGBT Transistor Module
,Practical High Power IGBT Module
High-Power IGBT Module
Boost Your Electronics Project with the FP150R07N3E4_B11
The FP150R07N3E4_B11 is a high-power IGBT module that is perfect for boosting your electronics project. With a powerful output of 150A and 650V, this IGBT module can handle high-power applications with ease. Here are some of the pros and cons of the FP150R07N3E4_B11:
Pros:
- High power output makes it ideal for demanding applications
- High switching frequency allows for fast and efficient operation
- Built-in temperature sensor helps prevent overheating
- Robust design ensures reliable operation even in harsh environments
Cons:
- Higher cost compared to smaller IGBT modules
- Bulky size may not be ideal for compact projects Despite its higher cost and bulky size, the FP150R07N3E4_B11 offers unbeatable performance for high-power applications. Its robust design and built-in temperature sensor make it a reliable choice for electronics projects.
Whether you're a DIY enthusiast or a professional electronics engineer, the FP150R07N3E4_B11 is an excellent choice for boosting your next project.
Specifications:
- Product Category:IGBT Modules
- RoHS: Details
- Product:IGBT Silicon Modules
- Configuration:3-Phase Inverter
- Collector- Emitter Voltage VCEO Max:650 V
- Collector-Emitter Saturation Voltage:1.55 V
- Continuous Collector Current at 25 C:150 A
- Gate-Emitter Leakage Current: 400 nA
- Pd - Power Dissipation:430 W
- Minimum Operating Temperature:- 40 C
- Maximum Operating Temperature:+ 150 C
- Packaging:Tray
- Brand:Infineon Technologies
- Product Type:IGBT Modules
- Series: Trench/Fieldstop IGBT4 - E4
- Subcategory:IGBTs
- Tradename:EconoPIM PressFIT
- Unit Weight:300 g