High Speed IGBT Transistor Module IXGH48N60C3D1 For 40-100kHz Switching
High Speed IGBT Transistor Module
,Switching IGBT Transistor Module
,IXGH48N60C3D1
Invest in IXGH48N60C3D1 for High-Powered Electronics
Pros and Cons of IXGH48N60C3D1
Are you in the market for a high-powered transistor for your electronics project? Look no further than IXGH48N60C3D1. This reliable NPT IGBT transistor offers several benefits, including:
Pros:
- Efficient power management: With a low collector-to-emitter saturation voltage, this transistor allows for more efficient power management in your electronic devices.
- High current rating: At 48A, you can count on this transistor to handle even the most demanding electrical loads with ease.
- Durable design: Built to withstand extreme temperature ranges (-55°C to +175°C), this transistor offers long-term reliability. While the IXGH48N60C3D1 offers several advantages, there are a few cons to keep in mind, such as:
Cons:
- Higher cost: As a high-powered transistor, the IXGH48N60C3D1 comes with a higher price tag than some of its lower-powered counterparts.
- Sophisticated installation: Proper installation and use of this transistor requires advanced technical knowledge and skills.
Overall, if you're looking for a dependable, powerful transistor for your electronics project, IXGH48N60C3D1 is a smart choice. Its efficient power management, high current rating, and durability make it a popular choice among experienced creators and builders.
Technical details:
- Manufacturer: XYS
- Product Category: IGBT Transistors
- RoHS:Details
- Technology:Si
- Package/Case:TO-247AD-3
- Mounting Style:Through Hole
- Configuration:Single
- Collector- Emitter Voltage VCEO Max:600 V
- Collector-Emitter Saturation Voltage:2.5 V
- Maximum Gate Emitter Voltage:- 20 V, + 20 V
- Continuous Collector Current at 25 C: 75 A
- Pd - Power Dissipation: 300 W
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Series: IXGH48N60
- Packaging:Tube
- Brand:IXYS
- Continuous Collector Current Ic Max:75 A
- Height:21.46 mm
- Length:16.26 mm
- Product Type:IGBT Transistors
- Subcategory:IGBTs
- Width:5.3 mm
- Unit Weight:6,500 g