200V 30A Transistor IC Chip IRFP250N MOSFET For High Voltage And High Current
Transistor IC Chip 200V
,30A Transistor IC Chip
,IRFP250N
IRFP250N Power MOSFET
The Perfect Solution for High Voltage and High Current Applications
Are you looking for a reliable MOSFET for your next electronic project? Look no further than the IRFP250N Power MOSFET. This MOSFET comes with a host of benefits that make it the perfect solution for high voltage and high current applications.
Pros:
- High voltage capability of up to 200V
- Low on-resistance (0.07 ohms), meaning it can handle high current levels
- High switching speed for fast and efficient operation
- Durable and long-lasting design
- Easy to install and integrate into existing circuits
- Affordable pricing, making it a cost-effective option for DIYers and professionals alike
Cons:
- May require additional cooling to prevent overheating in high power applications
- Not ideal for low voltage applications
- May not be suitable for applications requiring extremely precise control
In summary, the IRFP250N Power MOSFET is an excellent choice for high voltage and high current applications. Its high voltage capability, low on-resistance, and fast switching speed make it a reliable and affordable option for both DIYers and professionals. However, it may require additional cooling and may not be suitable for low voltage or highly precise applications.
Technical features:
- Mounting Style: Through Hole
- Package / Case: TO-247-3
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Vds - Drain-Source Breakdown Voltage: 200 V
- Id - Continuous Drain Current: 30 A
- Rds On - Drain-Source Resistance: 75 mOhms
- Vgs - Gate-Source Voltage: - 20 V, + 20 V
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 175 C
- Pd - Power Dissipation: 214 W
- Channel Mode: Enhancement
- Brand: Infineon / IR Configuration: Single
- Fall Time: 33 ns
- Height: 20.7 mm
- Length: 15.87 mm
- Product Type: MOSFET
- Rise Time: 43 ns
- Subcategory: MOSFETs
- Transistor Type: 1 N-Channel
- Typical Turn-Off Delay Time: 41 ns
- Typical Turn-On Delay Time: 14 ns
- Width: 5.31 mm Unit
- Weight: 0.211644 oz